Corrigendum: A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy
نویسندگان
چکیده
‘The authors appreciate the help of Professor Arokia Nathan and Dr. Sungsik Lee in University of Cambridge and Professor Mutsumi Kimura in Department of Electronics and Informatics, Ryukoku University. This work was supported by Research Exchanges with India and China scheme, Royal Academy of Engineering, UK, National Natural Science Foundation of China (Grant No. 61106090), the Spring Project in Ningbo Institute of Material Technology and Engineering, the Ningbo Natural Science Foundation of China (Grant No. Y10814VA08, No. 2014B82004), and Youth Innovation Promotion Association, Chinese Academy of Sciences. Professor Mutsumi Kimura from Department of Electronics and Informatics, Ryukoku University is appreciated for his explanation of CV measurement and calculation for DOS’.
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A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy
Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spectroscopy. However, they might involve lots of assumptions, calculations, temperature or optical i...
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